Parallel implementation of stochastic cellular automata model of electron-hole recombination in 2d and 3d heterogeneous semiconductors

Abstract

Parallel programs implementing stochastic cellular automata (CA) model of electron-hole recombination in an inhomogeneous semiconductor for two- and three-dimensional cases are developed. The spatio-temporal distributions of particles are investigated by the CA simulation. Spatial separation of electrons and holes with clusters formation is found and analyzed. Parallel implementation of the CA model allows us to calculate integral characteristics of the recombination process (particle densities and radiative intensity) in acceptable time. Recombination kinetics in the vicinity of the recombination centers and diffusion in two- and three-dimensional space is investigated using the parallel program.